| Part Number | RJP65S05DWT |
| Manufacturer | Renesas |
| Title | IGBT |
| Description | of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and ... |
| Features |
Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 75 A, VGE = 15 V, Ta = 25C) High speed Switching Short circuit withstands time (10 s min.) R07DS0822EJ0001 Rev.0.01 Jul 05, 2012 Outline Die: RJP65S05DWT-80 2 C 3 Wafer: RJP65S05DWA-80 2 1G 1 3 1. Gate 2. Coll... |
| File Size | 128.30KB |
| Datasheet |
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RJP65S05DWA : of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 2. Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics assumes no liability whatsoever for any dama.