Preliminary Datasheet RJP65S08DWT/RJP65S08DWA 650V - 200A - IGBT Application: Inverter Features  Low collector to emitter saturation voltage VCE(sat) = 1.
6 V typ.
(at IC = 200 A, VGE = 15 V, Ta = 25C)  High speed Switching  Short circuit withstands time (10 s min.
) R07DS0825EJ0001 Rev.
0.
01 Jul 05, 2012 Outline Die: RJP65S08DWT-80 2 C Wafer: RJP65S08DWA-80 3 2 3 1G 1 3 1.
Gate 2.
Collector (The back) 3.
Emitter E 3 3 www.
DataSheet.
net/ Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Junction temperature Symbol VCES VGES IC Note1 IC Note1 Tj Ratings 650 ±30 400 200 150 Unit V V A A C Notes: 1.
...

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