Part Number
|
RJP1CS05DWT |
Manufacturer
|
Renesas |
Description
|
IGBT |
Published
|
Jul 21, 2012 |
Detailed Description
|
Preliminary Datasheet
RJP1CS05DWT/RJP1CS05DWA
1250V - 75A - IGBT Application: Inverter
Features
Low collector to emit...
|
Datasheet
|
RJP1CS05DWT
|
Overview
Preliminary Datasheet
RJP1CS05DWT/RJP1CS05DWA
1250V - 75A - IGBT Application: Inverter
Features
Low collector to emitter saturation voltage VCE(sat) = 1.
8 V typ.
(at IC = 75 A, VGE = 15 V, Ta = 25C) High speed switching Short circuit withstands time (10 s min.
) R07DS0828EJ0001 Rev.
0.
01 Jul 05, 2012
Outline
Die: RJP1CS05DWT-80
2 C 3
Wafer: RJP1CS05DWA-80
2
1G
1
3
1.
Gate 2.
Collector (The back) 3.
Emitter
E 3
3
www.
DataSheet.
net/
Absolute Maximum Ratings
(Ta = 25°C)
Item Collector to emitter voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Junction temperature Symbol VCES VGES IC Note1 IC Note1 Tj Ratings 1250 ±30 150 75 150 Unit V V A A C
Notes: 1...
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