Preliminary Datasheet RJP1CS07DWT/RJP1CS07DWA 1250V - 150A - IGBT Application: Inverter Features  Low collector to emitter saturation voltage VCE(sat) = 1.
8 V typ.
(at IC = 150 A, VGE = 15 V, Ta = 25C)  High speed switching  Short circuit withstands time (10 s min.
) R07DS0830EJ0003 Rev.
0.
03 Jul 05, 2012 Outline Die: RJP1CS07DWT-80 2 C Wafer: RJP1CS07DWA-80 3 2 3 1G 1 3 E 3 1.
Gate 2.
Collector (The back) 3.
Emitter 3 www.
DataSheet.
net/ Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Junction temperature Symbol VCES VGES IC Note1 IC Note1 Tj Ratings 1250 ±30 300 150 150 Unit V V A A C Notes...

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