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Part Number
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2N5555 |
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Manufacturer
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ON Semiconductor |
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Description
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Switching JFET |
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Published
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Mar 22, 2005 |
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Detailed Description
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ON Semiconductort
JFET Switching
N–Channel — Depletion
3 GATE
1 DRAIN
2N5555
MAXIMUM RATINGS Rating
Drain–Source Vo...
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Datasheet
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2N5555
|
Overview
ON Semiconductort
JFET Switching
N–Channel — Depletion
3 GATE
1 DRAIN
2N5555
MAXIMUM RATINGS Rating
Drain–Source Voltage Drain–Gate Voltage Gate–Source Voltage Forward Gate Current Total Device Dissipation @ TC = 25°C
Derate above 25°C Junction Temperature Range Storage Temperature Range
Symbol VDS VDG VGS IGF PD
TJ Tstg
Value 25 25 25 10 350 2.
8
–65 to +150 –65 to +150
2 SOURCE
Unit Vdc Vdc Vdc mAdc mW mW/°C °C °C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic
OFF CHARACTERISTICS
Gate–Source Breakdown Voltage (IG = 10 µAdc, VDS = 0) Gate Reverse Current (VGS = 15 Vdc, VDS = 0) Drain Cutoff Current (VDS = 12 Vdc, VGS = –10 V) Drain Cutoff Current (VDS...
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