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2N5609

Part Number 2N5609
Manufacturer ETC
Description Silicon PNP Transistors
Published Mar 22, 2005
Detailed Description Power Transistors INCHANGEĆ¢ 2N5609 Silicon PNP Transistors Features With TO-66 package Designed for use as high-frequ...
Datasheet 2N5609




Overview
Power Transistors INCHANGEĆ¢ 2N5609 Silicon PNP Transistors Features With TO-66 package Designed for use as high-frequency drivers in audio amplifier Absolute Maximum Ratings Tc=25 SYMBOL VCBO VCEO VEBO ICP IC PC Tj Tstg PARAMETER Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature 5.
0 25 150 -55~150 RATING 80 80 5.
0 UNIT V V V A A W TO-66 Electrical Characteristics Tc=25 SYMBOL ICBO IEBO ICEO VCBO V(BR)CEO VEBO VCEsat-1 VCEsat-2 VCEsat-3 VCEsat-4 hFE-1 hFE-2 hFE-3 hFE-4 VBE(sat)1 VBE(sat)2 VBE(sat)3 fT tf ts PARAMETER Collector-base cut-off current Em...






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