Low Noise GaAs HEMT
MGF4921AM
4pin flat lead package
DESCRIPTION
The MGF4921AM super-low noise InGaAs HEMT (High Electron Mobility
Transistor) is designed for use in L to C band amplifiers.
The 4pin flat lead package is small-thin size, and offers high cost performance.
Outline Drawing
FEATURES
・Low noise figure NFmin.
= 0.
35dB (Typ.
) @ f=2.
4GHz NFmin.
= 0.
35dB (Typ.
) @ f=4GHz ・High associated gain Gs = 18.
0dB (Typ.
) @ f=2.
4GHz Gs = 13.
0dB (Typ.
) @ f=4GHz
Fig.
1
APPLICATION
L to C band low noise amplifiers
MITSUBISHI Proprietary
Not to be reproduced or disclosed without permission by Mitsubishi Electric
QUALITY GRADE
GG
RECOMMENDED BIAS CONDITIONS
VDS=2V , ID=10~25mA
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