May/2008
MITSUBISHI SEMICONDUTOR
GaAs FET
MGF4935AM
SUPER LOW NOISE InGaAs HEMT (4pin flat lead package)
DESCRIPTION
The MGF4935AM super-low noise HEMT (High Electron Mobility
Transistor) is designed for use in S to Ku band amplifiers.
The 4pin flat lead package is small-thin size, and offers high cost performance.
Outline Drawing
FEATURES
Low noise figure @ f=12GHz NFmin.
= 0.
45dB (Typ.
) High associated gain @ f=12GHz Gs = 12.
0dB (Typ.
)
Fig.
1
MITSUBISHI Proprietary
APPLICATION
S to Ku band low noise amplifiers
Not to be reproduced or disclosed without permission by Mitsubishi Electric
QUALITY GRADE
GG
RECOMMENDED BIAS CONDITIONS
VDS=2V , ID=10mA
ORDERING INFORMATION
Tape & ree...