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Part Number
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MGFS36E2325 |
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Manufacturer
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Mitsubishi Electric Semiconductor |
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Description
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2.3-2.5GHz HBT HYBRID IC |
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Published
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Nov 1, 2012 |
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Detailed Description
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MITSUBISHI SEMICONDUCTOR
MGFS36E2325
Specifications are subject to change without notice.
2.3-2.5GHz HBT HYBRID IC
Ou...
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Datasheet
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MGFS36E2325
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Overview
MITSUBISHI SEMICONDUCTOR
MGFS36E2325
Specifications are subject to change without notice.
2.
3-2.
5GHz HBT HYBRID IC
Outline Drawing
DESCRIPTION
MGFS36E2325 is a GaAs RF amplifier designed for WiMAX CPE.
4.
5 1.
0
FEATURES
• • • • • • • • • InGaP HBT Device 6V Operation 27dBm Linear Output Power 33dB Linear Gain Integrated Output Power Detector Integrated 1-bit 16dB Step Attenuator 50ohms Matched Surface Mount Package RoHS Compliant Package
4.
5
36E 2325 (Lot No.
)
10
9
8
7
6
APPLICATIONS
IEEE802.
16-2004, IEEE802.
16e-2005
1 2 3 4 5
1 2 3 4 5 6 7 8 9 10
Pin Vc (Vcb) Vc (Vc1) Vc (Vc2) Vc (Vc3) Pout Po_det GND Vref Vcont
DIM IN mm
(X-ray Top View)
FUNCTIONAL BLOCK DIAGRAM
Vc1
1000pF
...
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