Silicon RF Power MOS FET (Discrete)
RD07MVS1B
RoHS Compliance, Silicon MOSFET Power
Transistor,175MHz,520MHz,7W OUTLINE DRAWING
DESCRIPTION
RD07MVS1B is a MOS FET type
transistor specifically designed for VHF/UHF RF power
4.
9+/-0.
15 1.
0+/-0.
05
6.
0+/-0.
15
0.
2+/-0.
05
amplifiers applications.
RD07MVS1B improved a drain surge than RD07MVS1 by optimizing MOSFET structure.
1 2
3.
5+/-0.
05
Datasheet pdf - http://www.
DataSheet4U.
co.
kr/
3 INDEX MARK (Gate)
(0.
22)
(0.
25)
(0.
25)
FEATURES
Pout7W, Gp10dB @Vdd=7.
2V,f=520MHz High Efficiency: 60%typ.
(175MHz) High Efficiency: 55%typ.
(520MHz)
www.
DataSheet.
net/
0.
2+/-0.
05
0.
9+/-0.
1
High power gain:
Terminal No.
1.
Drain (output) 2.
Source (...