2N6031

2N6030 : The CENTRAL SEMICONDUCTOR 2N5629, 2N6029 series devices are complementary silicon power transistors, manufactured by the epitaxial base process, designed for high voltage and high power amplifier applications. MARKING: FULL PART NUMBER TO-3 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM IB PD TJ, Tstg JC 2N5629 2N6029 100 2N5630 2N6030 120 100 120 7.0 16 20 5.0 200 -65 to +200 0.875 ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise note.

2N6030 : ·With TO-3 package ·Complement to type 2N5629 2N5630 ·High power dissipations APPLICATIONS ·For high voltage and high power amplifier applications PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6029 2N6030 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL VCBO PARAMETER 2N6029 Collector-base voltage 2N6030 2N6029 VCEO VEBO IC ICM IB PD Tj Tstg Collector-emitter voltage 2N6030 Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature TC=25 Open collector Open base -120 -7 -16 -20 -5.0 200 200 -65~200 V A A A W Open emitter -120 -100 V CONDITIONS VALUE -100 V UNIT THERMA.

2N6030 : MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N5630/D High-Voltage Ċ High Power Transistors . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage — VCEO(sus) = 120 Vdc — 2N5630, 2N6030 VCEO(sus) = 140 Vdc — 2N5631, 2N6031 • High DC Current Gain — @ IC = 8.0 Adc hFE = 20 (Min) — 2N5630, 2N6030 hFE = 15 (Min) — 2N5631, 2N6031 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΕ Low Collector–Emitter Saturation Voltage — ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVCE(sat) = 1.0 Vdc (Max) @ IC = 10 Adc ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS (1) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ.

2N6031 : ·With TO-3 package ·Complement to type 2N5631 ·High collector sustaining voltage ·High DC current gain ·Low collector saturation voltage APPLICATIONS ·For high power audio amplifier and high voltage switching regulator circuits applications PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6031 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC ICM IB PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -140 -140 -7 -16 -2.

2N6031 : The CENTRAL SEMICONDUCTOR 2N6031 is a 16 Ampere PNP Silicon Power Transistor designed for use in high power amplifiers and high voltage switching regulator circuits. MARKING: FULL PART NUMBER TO-3 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM IB PD TJ, Tstg ΘJC 140 140 7.0 16 20 5.0 200 -65 to +200 0.875 ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=140V ICEX VCE=140V, VEB(off)=1.5V ICEX VC.

2N6031 : MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N5630/D High-Voltage Ċ High Power Transistors . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage — VCEO(sus) = 120 Vdc — 2N5630, 2N6030 VCEO(sus) = 140 Vdc — 2N5631, 2N6031 • High DC Current Gain — @ IC = 8.0 Adc hFE = 20 (Min) — 2N5630, 2N6030 hFE = 15 (Min) — 2N5631, 2N6031 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΕ Low Collector–Emitter Saturation Voltage — ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVCE(sat) = 1.0 Vdc (Max) @ IC = 10 Adc ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS (1) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ.

2N6032 : at any time, without notice. VPT Components makes no commitment to update the information and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future changes to its specifications and product descriptions. No license, express or implied, by estoppels or otherwise, to any intellectual property rights is granted by this document. THESE MATERIALS ARE PROVIDED "AS IS" WITHOUT WARRANTY OF ANY KIND, EITHER EXPRESS OR IMPLIED, RELATING TO SALE AND/OR USE OF VPT COMPONENTS’ PRODUCTS INCLUDING LIABILITY OR W.

2N6032 : ·Collector-Emitter Breakdown Voltage- : V(BR)CEO=90V(Min) ·Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS ·Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNI T VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 90 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 50 A IB Base Current-Continuous PD Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 10 A 140 W 200 ℃ Tstg Storage Temperature Range -65~200 ℃ 2N6032 isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELE.

2N6032 : NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/528 Devices 2N6032 2N6033 TECHNICAL DATA Qualified Level JANTX JANTXV MAXIMUM RATINGS Ratings Symbol 2N6032 2N6033 Collector-Emitter Voltage Collector-Base Voltage Collector Current Emitter-Base Voltage Base Current Total Power Dissipation @ TC = +250C (1) VCEO VCBO IC VEBO IB PT 90 120 120 150 50 40 7.0 10 140 Operating & Storage Temperature Range THERMAL CHARACTERISTICS Top, Tstg -65 to +200 Characteristics Symbol Max. Thermal Resistance, Junction-to-Case RθJC 1) Derate linearly 800 mW/0C between TC = 250C and TC = 2000C 1.25 ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted) Characteristics Symbol .

2N6032 : 2N6032 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 29.9 (1.177) 30.4 (1.197) 16.64 (0.655) 17.15 (0.675) 0.97 (0.060) 1.10 (0.043) 22.23 (0.875) max. 12 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) 1 – Base TO3 (TO204AA) PINOUTS 2 – Emitter Case - Collector Bipolar NPN Device. VCEO = 90V IC = 50A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications. Parameter VCEO* IC(CONT) hFE ft PD Test Conditio.

2N6033 : 2N6033 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 22.23 (0.875) max. 16.64 (0.655) 17.15 (0.675) 1 2 Bipolar NPN Device. VCEO = 120V 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) IC = 40A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications. TO3 (TO204AA) PINOUTS 1 – Base 2 – Emitter Case - Collector Parameter VCEO* IC(CONT) hFE ft PD Test .

2N6033 : at any time, without notice. VPT Components makes no commitment to update the information and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future changes to its specifications and product descriptions. No license, express or implied, by estoppels or otherwise, to any intellectual property rights is granted by this document. THESE MATERIALS ARE PROVIDED "AS IS" WITHOUT WARRANTY OF ANY KIND, EITHER EXPRESS OR IMPLIED, RELATING TO SALE AND/OR USE OF VPT COMPONENTS’ PRODUCTS INCLUDING LIABILITY OR W.

2N6033 : ·Collector-Emitter Breakdown Voltage- : V(BR)CEO=-120V(Min) ·Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS ·Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNI T VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 40 A IB Base Current-Continuous PD Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 10 A 140 W -65~200 ℃ Tstg Storage Temperature Range -65~200 ℃ 2N6033 isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transisto.

2N6033 : NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/528 Devices 2N6032 2N6033 TECHNICAL DATA Qualified Level JANTX JANTXV MAXIMUM RATINGS Ratings Symbol 2N6032 2N6033 Collector-Emitter Voltage Collector-Base Voltage Collector Current Emitter-Base Voltage Base Current Total Power Dissipation @ TC = +250C (1) VCEO VCBO IC VEBO IB PT 90 120 120 150 50 40 7.0 10 140 Operating & Storage Temperature Range THERMAL CHARACTERISTICS Top, Tstg -65 to +200 Characteristics Symbol Max. Thermal Resistance, Junction-to-Case RθJC 1) Derate linearly 800 mW/0C between TC = 250C and TC = 2000C 1.25 ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted) Characteristics Symbol .

2N6034 : .

2N6034 : www.DataSheet4U.com (PNP) 2N6034, 2N6035, 2N6036; (NPN) 2N6038, 2N6039 Plastic Darlington Complementary Silicon Power Transistors Plastic Darlington complementary silicon power transistors are designed for general purpose amplifier and low−speed switching applications. Features http://onsemi.com • ESD Ratings: Machine Model, C; 400 V Human Body Model, 3B; 8000 V 4.0 AMPERES DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 40, 60, 80 VOLTS, 40 WATTS • Epoxy Meets UL 94 V−0 @ 0.125 in • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Collector−Emitter Voltage 2N6034 2N6035, 2N6038 2N6036, 2N6039 2N6034 2N6035, 2N6038 2N6036, 2N6039 Symbol VCEO Value 40 60 80 40 60 80 5.0 4.0 .