Part Number
|
AP9960M |
Manufacturer
|
Advanced Power Electronics |
Description
|
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
Published
|
Nov 21, 2012 |
Detailed Description
|
AP9960M
Advanced Power Electronics Corp.
▼ Low On-Resistance ▼ Fast Switching Speed ▼ Surface Mount Package
D2 D1 D1 D2...
|
Datasheet
|
AP9960M
|
Overview
AP9960M
Advanced Power Electronics Corp.
▼ Low On-Resistance ▼ Fast Switching Speed ▼ Surface Mount Package
D2 D1 D1 D2
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON)
G2 S2
40V 20mΩ 7.
8A
ID
SO-8
S1
G1
Description
D1 D2
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
G1 S1
G2 S2
Absolute Maximum Ratings
www.
DataSheet.
net/
Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1 3 3
Rating 40 ± 20 7.
8 6.
2 20 2 0.
016 -55 to...
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