SEMICONDUCTORS
TIP150 SILICON DARLINGTON POWER
TRANSISTORS
NPN epitaxial-base
transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe.
High voltage, high forward and reverse energy designed for industrial and consumer applications.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
VCBO VCEO VEBO IC ICM IB PT tJ ts tL
Ratings
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Peak Current (1) Base Current Power Dissipation at Case Temperature (2) @ Tmb 25° Power Dissipation at free Air Temperature (3) Junction Temperature Storage Temperature range Lead Temperature 3.
2 mm from case for 10 seconde
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