Type
BSC520N15NS3 G
OptiMOS™3 Power-
Transistor
Features • Optimized for dc-dc conversion • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 150 °C operating temperature • Pb-free lead plating; RoHS compliant; • Qualified according to JEDEC1) for target application • Halogen-free according to IEC61249-2-21
Product Summary V DS R DS(on),max ID 150 52 21 PG-TDSON-8 V mΩ A
Type BSC520N15NS3 G
Package PG-TDSON-8
Marking 520N15NS
http://net/
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current3) Avalanche energy, s...