2N6518
2N6518
High Voltage
Transistor
• Collector-Emitter Voltage: VCEO= -250V • Collector Dissipation: PC (max)=625mW • Complement to 2N6515
1
TO-92
PNP Epitaxial Silicon
Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Derate above 25°C Junction Temperature Storage Temperature
1.
Emitter 2.
Base 3.
Collector
Value -250 -250 -5 -500 -250 625 5 150 -55 ~ 150
Units V V V mA mA mW mW/°C °C °C
• Refer to 2N6520 for graphs
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol BVCBO BV...