Ordering number:341G
PNP/
NPN Epitaxial Planar Silicon
Transistor
2SB632, 632K/2SD612, 612K
25V/35V, 2A Low-Frequency Power Amplifier Applications
Features
· High collector dissipation and wide ASO.
Package Dimensions
unit:mm 2009B
[2SB632, 632K/2SD612, 612K]
( ) : 2SB632, 632K
1 : Emitter 2 : Collector 3 : Base JEDEC : TO-126
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Conditions 2SB632, D612 (–)25
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2SB632K, D612K (–)35 (–)35...