NGTB15N60EG
IGBT - Short-Circuit Rated
This Insulated Gate Bipolar
Transistor (IGBT) features a robust and cost effective Non−Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications.
Offering both low on state voltage and minimal switching loss, the IGBT is well suited for motor drive control and other hard switching applications.
Incorporated into the device is a rugged co−packaged reverse recovery diode with a low forward voltage.
Features
• Low Saturation Voltage Resulting in Low Conduction Loss • Low Switching Loss in Higher Frequency Applications • Soft Fast Reverse Recovery Diode • 10 ms Short Circuit Capability • Excellent Curren...