NGTB20N120IHLWG IGBT
This Insulated Gate Bipolar
Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss.
The IGBT is well suited for resonant or soft switching applications.
Incorporated into the device is a rugged co−packaged free wheeling diode with a low forward voltage.
Features
http://onsemi.
com
• • • • •
Low Saturation Voltage using Trench with Fieldstop Technology Low Switching Loss Reduces System Power Dissipation Optimized for Low Case Temperature in IH Cooker Application Low Gate Charge These are Pb−Free Devices...