Part Number
|
SIHG460B |
Manufacturer
|
Vishay Siliconix |
Description
|
Power MOSFET |
Published
|
Jun 23, 2013 |
Detailed Description
|
IRFP460B, SiHG460B
www.vishay.com
Vishay Siliconix
D Series Power MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) ma...
|
Datasheet
|
SIHG460B
|
Overview
IRFP460B, SiHG460B
www.
vishay.
com
Vishay Siliconix
D Series Power MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max.
RDS(on) max.
at 25 °C () Qg max.
(nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 170 14 28 Single
D
FEATURES
• Optimal Design
550 0.
25
- Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness - Avalanche Energy Rated (UIS) • Optimal Efficiency and Operation - Low Cost - Simple Gate Drive Circuitry - Low Figure-of-Merit (FOM): Ron x Qg - Fast Switching • Material categorization: For definitions of compliance please see www.
vishay.
com/doc?99912
Note * Lead (Pb)-containing terminations are not RoHS-compliant.
...
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