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2SA1032

Part Number	2SA1032
Manufacturer	Hitachi Semiconductor
Title	Silicon PNP Epitaxial Transistor
Description	2SA1031, 2SA1032 Silicon PNP Epitaxial Application • Low frequency low noise amplifier • Complementary pair with 2SC458 (LG) and 2SC2310 Outline...
Features	— — — — — — 280 3.3 — Max — — — –0.5 –0.5 320 –0.8 –0.2 — 4.0 5 V V MHz pF dB Unit V V V µA µA Test conditions I C = –10 µA, IE = 0 I C = –1 mA, RBE = ∞ I E = –10 µA, IC = 0 VCB = –18 V, IE = 0 VEB = –2 V, IC = 0 VCE = –12 V, I C = –2 mA VCE = –12 V, I C = –2 mA I C = –10 mA, I B = –1 mA VCE = –12 ...
File Size	31.15KB
Datasheet	2SA1032 PDF File

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2SA1030 : 2SA1029, 2SA1030 Silicon PNP Epitaxial Application • Low frequency amplifier • Complementary pair with 2SC458 and 2SC2308 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SA1029, 2SA1030 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IE PC Tj Tstg 2SA1029 –30 –30 –5 –100 100 300 150 –55 to +150 2SA1030 –55 –50 –5 –100 100 300 150 –55 to +150 Unit V V V mA mA mW °C °C Electrical Characteristics (Ta = 25°C) 2SA1029 Item Collector to base breakdown voltage Collector to emitter breakd.

2SA1031 : 2SA1031, 2SA1032 Silicon PNP Epitaxial Application • Low frequency low noise amplifier • Complementary pair with 2SC458 (LG) and 2SC2310 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SA1031, 2SA1032 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IE PC Tj Tstg 2SA1031 –30 –30 –5 –100 100 300 150 –55 to +150 2SA1032 –55 –50 –5 –100 100 300 150 –55 to +150 Unit V V V mA mA mW °C °C 2 2SA1031, 2SA1032 Electrical Characteristics (Ta = 25°C) 2SA1031 Item Collector to base breakdown .

2SA1034 : Transistor 2SA1034, 2SA1035 Silicon PNP epitaxial planer type For low-frequency and low-noise amplification Complementary to 2SC2405 and 2SC2406 Unit: mm s Features q q q 2.9 –0.05 Parameter Collector to base voltage Collector to 2SA1034 2SA1035 2SA1034 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings –35 –55 –35 –55 –5 –100 –50 200 150 –55 ~ +150 Unit 1.1 –0.1 +0.2 2 emitter voltage 2SA1035 Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature V V mA mA mW ˚C ˚C 1:Base 2:Emitter 3:Collector JEDEC:TO–236 EIAJ:SC–59 Mini Type Package Marking symbol : F(2SA1034) H(2SA1035) s Electrical Characteristics.

2SA1035 : Transistor 2SA1034, 2SA1035 Silicon PNP epitaxial planer type For low-frequency and low-noise amplification Complementary to 2SC2405 and 2SC2406 Unit: mm s Features q q q 2.9 –0.05 Parameter Collector to base voltage Collector to 2SA1034 2SA1035 2SA1034 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings –35 –55 –35 –55 –5 –100 –50 200 150 –55 ~ +150 Unit 1.1 –0.1 +0.2 2 emitter voltage 2SA1035 Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature V V mA mA mW ˚C ˚C 1:Base 2:Emitter 3:Collector JEDEC:TO–236 EIAJ:SC–59 Mini Type Package Marking symbol : F(2SA1034) H(2SA1035) s Electrical Characteristics.

2SA1036 : BL Galaxy Electrical Silicon Epitaxial Planar Transistor FEATURES z Larg e IC.ICMAX. =-500mA. z Low Production specification 2SA1036 Pb Lead-free VCE(sat). Ideal for low-voltage operation. APPLICATIONS z Ideal for low-voltage operation. S OT-23 ORDERING INFORMATION Type No. 2SA1 036 Marking HP,HQ,HR Package Code SOT -23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter VCBO VCEO VEBO IC PC Tj,Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature Value -40 -32 -5 -500 200 -55~150 Units V V V mA mW ℃ ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified .

2SA1036 : 2SA1036 Elektronische Bauelemente -0.5A, -40V PNP Silicon General Purpose Transistor RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES IC Max.= -500 mA Low VCE(sat). Ideal for low-voltage operation. 3 SOT-23 A L 3 CLASSIFICATION OF hFE Product-Rank Range Marking 2SA1036-P 82~180 HP 2SA1036-Q 120~270 HQ 2SA1036-R K 1 Top View 2 C B 1 E 2 180~390 HR F D G REF. A B C D E F Millimeter Min. Max. 2.80 3.04 2.10 2.55 1.20 1.40 0.89 1.15 1.78 2.04 0.30 0.50 H REF. G H J K L J Millimeter Min. Max. 0.09 0.18 0.45 0.60 0.08 0.177 0.6 REF. 0.89 1.02 PACKAGE INFORMATION Package SOT-23 MPQ 3K LeaderSize 7’ inch Collector 3 1 Base 2 Emitter ABSOLUTE MAXIMUM R.

2SA1036 : Production specification Silicon Epitaxial Planar Transistor FEATURES  Large IC.ICMAX. =-500mA. Pb Lead-free  Low VCE(sat). Ideal for low-voltage operation.  Complements the 2SC2411. 2SA1036 APPLICATIONS  Ideal for low-voltage operation. ORDERING INFORMATION Type No. Marking 2SA1036 HP/HQ/HR SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO VCEO VEBO IC PC Tj,Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature -40 -32 -5 -500 200 -55 to +150 Units V V V mA mW ℃ C012 Rev.A www.gmesemi.com 1 Production s.

2SA1036 : 1. BASE 2. EMITTER 3. COLLECTOR Features Large IC. ICMax.= -500 mA Low VCE(sat). Ideal for low-voltage operation. 2SA1036 SOT-23 Transistor(PNP) SOT-23 MARKING : HP, HQ, HR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value -40 -32 -5 -500 200 150 -55-150 Units V V V mA mW ℃ ℃ Dimensions in inches and (millimeters) ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter.

2SA1036-P : MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SA1036-P 2SA1036-Q 2SA1036-R Features • • • • • • Halogen free available upon request by adding suffix "-HF" Large IC. ICMax.= -0.5 A Low VCE(sat). Ideal for low-voltage operation. Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Maximum Ratings @ Ta = 25ć(unless otherwise noted) PNP Silicon Epitaxial Transistors SOT-23 A D Symbol IC PD Parameter Value Collector Current Collector Power Dissipation Temperature -0.5 0.2 .

2SA1036-Q : MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SA1036-P 2SA1036-Q 2SA1036-R Features • • • • • • Halogen free available upon request by adding suffix "-HF" Large IC. ICMax.= -0.5 A Low VCE(sat). Ideal for low-voltage operation. Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Maximum Ratings @ Ta = 25ć(unless otherwise noted) PNP Silicon Epitaxial Transistors SOT-23 A D Symbol IC PD Parameter Value Collector Current Collector Power Dissipation Temperature -0.5 0.2 .

2SA1036-R : MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SA1036-P 2SA1036-Q 2SA1036-R Features • • • • • • Halogen free available upon request by adding suffix "-HF" Large IC. ICMax.= -0.5 A Low VCE(sat). Ideal for low-voltage operation. Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Maximum Ratings @ Ta = 25ć(unless otherwise noted) PNP Silicon Epitaxial Transistors SOT-23 A D Symbol IC PD Parameter Value Collector Current Collector Power Dissipation Temperature -0.5 0.2 .

2SA1036K : 2SA1036K Medium Power Transistor (-32V,-500mA) Parameter VCEO IC Value -32V -500mA lFeatures 1)Large IC. 　 ICMAX=-500mA 2)Low VCE(sat). 　 Ideal for low-voltage operating. 3)Complements the 2SC2411K. lOutline SMT3 　　 SOT-346 SC-59 　　　　　　　　　　　 lInner circuit Datasheet 　　 lApplication GENERAL PURPOSE SMALL SIGNAL AMPLIFIER lPackaging specifications 　　　　　　　　　　　　　　　　　　　　　　 Part No. Package Package size Taping code Reel size Tape width (mm) (mm) Basic ordering unit.(pcs) Marking 2SA1036K SMT3 2928 T146 180 8 3000 H 　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　 www.rohm.com © 201.

2SA1036K : SOT-23 PNP 。Silicon PNP transistor in a SOT-23 Plastic Package. / Features ，， 2SC2411K 。 Large Ic low Vce(sat),complementary pair with the 2SC2411K. / Applications 。 Medium power amplifier applications. / Equivalent Circuit / Pinning 3 2 1 PIN1：Emitter PIN 2：Base PIN 3：Collector / hFE Classifications & Marking hFE Classifications Symbol hFE Range P 82～180 Q 120～270 Marking HHP HHQ R 180～390 HHR http://www.fsbrec.com 1/6 2SA1036K Rev.E Mar.-2016 / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range S.

2SA1036K : 2SA1036K(3CG1036K) PNP /SILICON PNP TRANSISTOR :。 Purpose: Medium power amplifier applications. :，， 2SC2411K（3DG2411K）。 Features: .Large Ic low Vce(sat),complementary pair with the 2SC2411K(3DG2411K). /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO -40 V VCEO -32 V VEBO -5.0 V IC -500 mA PC 200 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Rating Symbol Test condition Min Typ VCBO IC=-100μA -40 VCEO IC=-1.0mA -32 VEBO IE=-100μA -5.0 ICBO VCB=-20V IEBO VEB=-4.0V hFE VCE=-3.0V IC=-10mA 82 VCE(sat) IC=-100mA IB=-10mA fT VCE=-5.0V IE=20mA f=100MHz 200 Cob VCB=-10V IE=0 f=1.0MHz hFE 、/hFE Classifications、Markin.

2SA1036K : 1. BASE 2. EMITTER 3. COLLECTOR 2SA1036K SOT-23-3L Transistor(PNP) SOT-23-3L 2.92 0.35 1.17 Features Large IC. IC= -500 mA Low VCE(sat). Ideal for low-voltage operation. MARKING : HP, HQ, HR 2.80 1.60 0.15 1.90 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Dimensions in inches and (millimeters) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value -40 -32 -5 -500 200 150 -55-150 Units V V V mA mW ℃ ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage C.

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