TOSHIBA
Transistor Silicon
PNP Epitaxial Type (PCT process)
2SA1049
2SA1049
Audio Frequency Amplifier Applications
Unit: mm
• Small package.
• High breakdown voltage: VCEO = −120 V • High hFE: hFE = 200~700 • Excellent hFE linearity: hFE (IC = −0.
1 mA)/hFE (IC = −2 mA) = 0.
95 (typ.
) • Low noise: NF = 1dB (typ.
), 10dB (max) • Complementary to 2SC2459.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
−120
V
Collector-emitter voltage
VCEO
−120
V
Emitter-base voltage
VEBO −5 V
Collector current
IC
−100
mA
Base current
IB
−20 mA
JEDEC
―
Collector power dissipation
PC
200 mW
JEITA
―
Junction temperature Storage te...