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PTFA081501F

Part Number PTFA081501F
Manufacturer Infineon
Description Thermally-Enhanced High Power RF LDMOS FETs
Published Aug 6, 2013
Detailed Description PTFA081501E PTFA081501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 864 – 900 MHz Description The PTFA081501E and...
Datasheet PTFA081501F





Overview
PTFA081501E PTFA081501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 864 – 900 MHz Description The PTFA081501E and PTFA081501F are thermally-enhanced, 150-watt, internally matched GOLDMOS® FETs intended for ultralinear applications.
They are characaterized for CDMA and CDMA2000 operation from 864 to 900 MHz.
Thermally-enhanced packages provide the coolest operation available.
Full gold metallization ensures excellent device lifetime and reliability.
PTFA081501E Package H-30248-2 PTFA081501F Package H-31248-2 IS-95 CDMA Performance VDD = 28 V, IDQ = 950 mA, ƒ = 900 MHz TCASE = 25°C TCASE = 90°C Features • • • Adjacent Channel Power Ratio (dBc) Thermally-enhanced packages, Pb-free an...






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