Part Number
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PTFA081501F |
Manufacturer
|
Infineon |
Description
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Thermally-Enhanced High Power RF LDMOS FETs |
Published
|
Aug 6, 2013 |
Detailed Description
|
PTFA081501E PTFA081501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 864 – 900 MHz
Description
The PTFA081501E and...
|
Datasheet
|
PTFA081501F
|
Overview
PTFA081501E PTFA081501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 864 – 900 MHz
Description
The PTFA081501E and PTFA081501F are thermally-enhanced, 150-watt, internally matched GOLDMOS® FETs intended for ultralinear applications.
They are characaterized for CDMA and CDMA2000 operation from 864 to 900 MHz.
Thermally-enhanced packages provide the coolest operation available.
Full gold metallization ensures excellent device lifetime and reliability.
PTFA081501E Package H-30248-2
PTFA081501F Package H-31248-2
IS-95 CDMA Performance
VDD = 28 V, IDQ = 950 mA, ƒ = 900 MHz TCASE = 25°C TCASE = 90°C
Features
• • •
Adjacent Channel Power Ratio (dBc)
Thermally-enhanced packages, Pb-free an...
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