Part Number
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PTFA082201F |
Manufacturer
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Infineon |
Description
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Thermally-Enhanced High Power RF LDMOS FETs |
Published
|
Aug 6, 2013 |
Detailed Description
|
PTFA082201E PTFA082201F
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs 220 W, ...
|
Datasheet
|
PTFA082201F
|
Overview
PTFA082201E PTFA082201F
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs 220 W, 869 – 894 MHz
Description
The PTFA082201E and PTFA082201F are 220-watt LDMOS FETs designed for CDMA and WCDMA power amplifier applications in the 869 to 894 MHz band.
Features include input and output matching, and thermally-enhanced packages with slotted or earless flanges.
Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability.
PTFA082201E Package H-36260-2
PTFA082201F Package H-37260-2
2-Carrier WCDMA Performance
VDD = 30 V, IDQ = 1950 mA, ƒ = 894 MHz, 3GPP WCDMA signal, P/A R = 8.
1 dB, 10 MHz c...
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