Part Number
|
FDMS86300DC |
Manufacturer
|
Fairchild Semiconductor |
Description
|
N-Channel MOSFET |
Published
|
Aug 8, 2013 |
Detailed Description
|
FDMS86300DC N-Channel Dual CoolTM Power Trench® MOSFET
March 2012
FDMS86300DC
N-Channel Dual CoolTM Power Trench® MOSF...
|
Datasheet
|
FDMS86300DC
|
Overview
FDMS86300DC N-Channel Dual CoolTM Power Trench® MOSFET
March 2012
FDMS86300DC
N-Channel Dual CoolTM Power Trench® MOSFET
80 V, 60 A, 3.
1 mΩ
Features
Dual CoolTM Top Side Cooling PQFN package Max rDS(on) = 3.
1 mΩ at VGS = 10 V, ID = 24 A Max rDS(on) = 4.
0 mΩ at VGS = 8 V, ID = 21 A High performance technology for extremely low rDS(on) 100% UIL Tested RoHS Compliant
General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process.
Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient ...
Similar Datasheet