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Part Number
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IXTH260N055T2 |
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Manufacturer
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IXYS |
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Description
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Power MOSFET |
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Published
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Aug 9, 2013 |
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Detailed Description
|
Preliminary Technical Information
TrenchT2TM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTH260N055T2
VD...
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Datasheet
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IXTH260N055T2
|
Overview
Preliminary Technical Information
TrenchT2TM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTH260N055T2
VDSS ID25
RDS(on)
= 55V = 260A ≤ 3.
3mΩ
TO-247
Symbol VDSS VDGR VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL Tsold Md Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C
Maximum Ratings 55 55 ± 20 260 160 780 100 600 480 -55 .
.
.
+175 175 -55 .
.
.
+175 V V V A A A A mJ W °C °C °C °C °C Nm/lb.
in.
g Features
z z z z z
G
D
S
(TAB)
G = Gate S = Source
D = Drain TAB = Drain
1.
6mm (0.
062in.
) from case for 10s Plastic body for 10 seconds Mount...
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