Transistor
2SA1124
Silicon
PNP epitaxial planer type
For low-frequency high breakdown voltage amplification Complementary to 2SC2632
5.
9± 0.
2
Unit: mm
4.
9± 0.
2
q
q q q
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
(Ta=25˚C)
Ratings –150 –150 –5 –100 –50 1 150 –55 ~ +150 Unit V V
3.
2 0.
45–0.
1 1.
27 1.
27
+0.
2
13.
5± 0.
5
Satisfactory foward current transfer ratio hFE collector current IC characteristics.
High collector to emitter voltage VCEO.
Small collector output capaci...