TOSHIBA
Transistor Silicon
PNP Epitaxial Type (PCT Process)
2SA1425
Power Amplifier Applications Driver-Stage Amplifier Applications
2SA1425
Unit: mm
• Complementary to 2SC3665.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
−120
V
Collector-emitter voltage
VCEO
−120
V
Emitter-base voltage
VEBO −5 V
Collector current
IC
−800
mA
Base current
IB −80 mA
Collector power dissipation
PC
1000
mW
Junction temperature Storage temperature range
Tj 150 °C
Tstg
−55 to 150
°C
JEDEC
―
Note1: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in
JEI...