TOSHIBA
Transistor Silicon
PNP Epitaxial Type (PCT Process)
2SA1430
Strobe Flash Applications Medium Power Amplifier Applications
2SA1430
Unit: mm
• High DC current gain and excellent hFE linearity : hFE (1) = 140 to 600 (VCE = −1 V, IC = −0.
5 A) : hFE (2) = 60 (min), 120 (typ.
) (VCE = −1 V, IC = −4 A)
• Low saturation voltage: VCE (sat) = −0.
5 V (max) (IC = −2 A, IB = −50 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
DC
Collector current
Pulsed
(Note 1)
Base current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO VCES VCEO VEBO
IC
ICP
IB PC T...