ST13009
High voltage fast-switching
NPN power
transistor
Features
■ Low spread of dynamic parameters ■ High voltage capability ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed
Applications
■ Switch mode power supplies
Description
The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability.
It uses a hollow emitter structure to enhance switching speeds.
3 2 1
TO-220
Figure 1.
Internal schematic diagram
Table 1.
Device summary
Order code
Marking (1)
Package
Packaging
ST13009
13009 L 13009 H
TO-220
Tube
1.
Product is pre-selected in DC current gain (group L and group H).
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