SSM3J133TU
TOSHIBA Field Effect
Transistor Silicon P-Channel MOS Type (U-MOSⅥ)
SSM3J133TU
○ Power Management Switch Applications
• 1.
5V drive • Low ON-resistance: RDS(ON) = 88.
4 mΩ (max) (@VGS = -1.
5 V)
RDS(ON) = 56.
0 mΩ (max) (@VGS = -1.
8 V) RDS(ON) = 39.
7 mΩ (max) (@VGS = -2.
5 V) RDS(ON) = 29.
8 mΩ (max) (@VGS = -4.
5 V)
Unit: mm 2.
1±0.
1 1.
7±0.
1
1
0.
3-+00.
.
015
2.
0±0.
1 0.
65±0.
05
Absolute Maximum Ratings (Ta = 25°C)
2
3
Characteristics
Symbol
Rating
Unit
0.
166±0.
05
Drain-source voltage
VDSS
-20
V
0.
7±0.
05
Gate-source voltage
VGSS
±8
V
Drain current
DC
ID (Note1)
-5.
5
A
Pulse
IDP (Note1)
-11.
0
power dissipation
Channel temperature Storage temperature range
PD (Not...