MSD601
NPN General Purpose
Transistors
P b Lead(Pb)-Free
1 2 3
SOT-23
MAXIMUM RATINGS(Ta=25°C)
Rating
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Collector Current - Peak Total Device Dissipation TA=25°C Junction Temperature Storage Temperature
Symbol
VCEO VCBO VEBO IC IC(P) PD Tj Tstg
Value
50 60 7.
0 100 200 0.
2 +150 -55 to +150
Unit
V V V mA mA mW °C °C
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18-Sep-06
MSD601
ELECTRICAL CHARACTERISTICS Characteristics
Collector-Emitter Breakdown Voltage IC = 2.
0mA, IE = 0A Collector-Base Breakdown Voltage IC = 10µA, IB = 0A Emitter-Base Breakdown Voltage IE= 10µA, I C=0 Collector Cutoff Current...