Ordering number:ENN3012
PNP Epitaxial Planar Silicon
Transistors
2SA1683/2SC4414
Low-Frequency General-Purpose Amplifier, Low-Frequency Power Amplifier Applications
Features
· Adoption of FBET process.
· High breakdown voltage : VCEO80V.
Package Dimensions
unit:mm 2033A
[2SA1683/2SC4414]
4.
0 2.
2
1.
8 3.
0
0.
6
0.
4 0.
5
0.
4 0.
4
15.
0
( ) : 2SA1683
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP IB PC Tj
Tstg
Electrical Characteristics at Ta = 25...