Ordering number:EN2973
Features
· High breakdown voltage.
· Adoption of MBIT process.
· Excellent hFE linearity.
PNP Epitaxial Planar Silicon
Transistors
2SA1699
High-Voltage Driver Applications
Package Dimensions
unit:mm 2003A
[2SA1699]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Colletor Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP PC Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Collector-to-Emitt...