Part Number
|
FDMC86102 |
Manufacturer
|
Fairchild Semiconductor |
Description
|
N-Channel Power Trench MOSFET |
Published
|
Sep 9, 2013 |
Detailed Description
|
FDMC86102 N-Channel Power Trench® MOSFET
March 2012
FDMC86102
N-Channel Power Trench® MOSFET
100 V, 20 A, 24 mΩ
Featur...
|
Datasheet
|
FDMC86102
|
Overview
FDMC86102 N-Channel Power Trench® MOSFET
March 2012
FDMC86102
N-Channel Power Trench® MOSFET
100 V, 20 A, 24 mΩ
Features
Max rDS(on) = 24 mΩ at VGS = 10 V, ID = 7 A Max rDS(on) = 38 mΩ at VGS = 6 V, ID = 5 A Low Profile - 1 mm max in Power 33 100% UIL Tested RoHS Compliant
General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Application
DC - DC Conversion
Top
Bottom S Pin 1 S S D G D D D D D D D 5 6 7 8 4 3 2 1 G S S S
Power 33
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol V...
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