Part Number
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FDMC86106LZ |
Manufacturer
|
Fairchild Semiconductor |
Description
|
N-Channel Power Trench MOSFET |
Published
|
Sep 9, 2013 |
Detailed Description
|
FDMC86106LZ N-Channel Power Trench® MOSFET
December 2010
FDMC86106LZ
N-Channel Power Trench® MOSFET
100 V, 7.5 A, 103 ...
|
Datasheet
|
FDMC86106LZ
|
Overview
FDMC86106LZ N-Channel Power Trench® MOSFET
December 2010
FDMC86106LZ
N-Channel Power Trench® MOSFET
100 V, 7.
5 A, 103 mΩ
Features
Max rDS(on) = 103 mΩ at VGS = 10 V, ID = 3.
3 A Max rDS(on) = 153 mΩ at VGS = 4.
5 V, ID = 2.
7 A HBM ESD protection level 3 KV typical (Note 4) 100% UIL Tested RoHS Compliant
General Description
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance.
G-S zener has been added to enhance ESD voltage level.
Application
DC - DC Conversion
Top Pin 1 S S S G
Bottom 5 6 7 8
D D D D D
...
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