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Part Number
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FDMC86160 |
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Manufacturer
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Fairchild Semiconductor |
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Description
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N-Channel Power Trench MOSFET |
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Published
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Sep 9, 2013 |
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Detailed Description
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FDMC86160 N-Channel Power Trench® MOSFET
January 2013
FDMC86160
N-Channel Power Trench® MOSFET
100 V, 43 A, 14 mΩ
Feat...
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Datasheet
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FDMC86160
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Overview
FDMC86160 N-Channel Power Trench® MOSFET
January 2013
FDMC86160
N-Channel Power Trench® MOSFET
100 V, 43 A, 14 mΩ
Features
Max rDS(on) = 14 mΩ at VGS = 10 V, ID = 9 A Max rDS(on) = 23 mΩ at VGS = 6 V, ID = 7 A High performance technology for extremely low rDS(on) Termination is Lead-free and RoHS Compliant
General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance.
This device is well suited for applications where ulta low RDS （on） is required in small spaces such as High performance VRM, POL and orring functions.
Applications
Bridge Topologies Synchr...
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