FDMS86102LZ N-Channel Shielded Gate PowerTrench® MOSFET October 2014 FDMS86102LZ N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 22 A, 25 mΩ Features General Description „ Shielded Gate MOSFET Technology „ Max rDS(on) = 25 mΩ at VGS = 10 V, ID = 7 A „ Max rDS(on) = 37 mΩ at VGS = 4.
5 V, ID = 5.
8 A „ HBM ESD protection level 6 KV typical (Note 4) „ 100% UIL Tested „ RoHS Compliant This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology.
This process has been optimized for the on-state resistance and yet maintain superior switching performance.
G-S zener has been added to enhance ESD vol...

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