Part Number
|
RJK03C5DPA |
Manufacturer
|
Renesas |
Description
|
Built in SBD N Channel Power MOS FET |
Published
|
Sep 9, 2013 |
Detailed Description
|
Preliminary Datasheet
RJK03C5DPA
30V, 50A, 2.9m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
F...
|
Datasheet
|
RJK03C5DPA
|
Overview
Preliminary Datasheet
RJK03C5DPA
30V, 50A, 2.
9m max.
Built in SBD N Channel Power MOS FET High Speed Power Switching
Features
High speed switching Capable of 4.
5 V gate drive Low drive current High density mounting Low on-resistance Pb-free Halogen-free R07DS0940EJ0400 Rev.
4.
00 Mar 22, 2013
Outline
RENESAS Package code: PWSN0008DE-A (Package name: WPAK(3F))
5 6 7 8 D D D D
5 6 7 8
4 G
4 3 2 1
1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain
S S S 1 2 3
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case...
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