Part Number
|
AUIRF9952Q |
Manufacturer
|
International Rectifier |
Description
|
Power MOSFET |
Published
|
Sep 9, 2013 |
Detailed Description
|
AUTOMOTIVE GRADE
PD - 97647
AUIRF9952Q
HEXFET® Power MOSFET
Features
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Advanced Planar Technology...
|
Datasheet
|
AUIRF9952Q
|
Overview
AUTOMOTIVE GRADE
PD - 97647
AUIRF9952Q
HEXFET® Power MOSFET
Features
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l l
Advanced Planar Technology Low On-Resistance Dual N and P Channel MOSFET Dynamic dV/dT Rating 150°C Operating Temperature Fast Switching Full Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified*
S1 G1 S2 G2
N-CHANNEL MOSFET 1 8 2 3 4 7
D1 D1 D2 D2
N-CH P-CH V(BR)DSS RDS(on) max.
ID 30V 3.
5A -30V -2.
3A 0.
10Ω 0.
25Ω
6 5
P-CHANNEL MOSFET
Top View
Description
Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.
Thi...
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