DATA SHEET
PNP SILICON EPITAXIAL
TRANSISTOR
2SA1836
PNP SILICON EPITAXIAL
TRANSISTOR
DESCRIPTION
The 2SA1836 is
PNP silicon epitaxial
transistor.
PACKAGE DRAWING (Unit: mm)
0.
3 ± 0.
05 0.
1 +0.
1 –0.
05
FEATURES
1.
6 ± 0.
1 0.
8 ± 0.
1
• High DC current gain: hFE2 = 200 TYP.
• High voltage: VCEO = −50 V
3 0 to 0.
1 2 0.
2 +0.
1 –0 0.
5 0.
5 1.
0 1.
6 ± 0.
1 0.
6 0.
75 ± 0.
05 1
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (pulse)
Note1 Note2
VCBO VCEO VEBO IC(DC) IC(pulse) PT Tj Tstg
−60 −50 −5.
0 −100 −200 200 150 –55 to + 150
V V V mA mA mW °C °C
Total Power Dissipation (TA = 25°C) Junct...