TOSHIBA
Transistor Silicon
PNP Epitaxial Type (PCT Process)
2SA1892
Power Amplifier Applications Power Switching Applications
2SA1892
Unit: mm
• Low collector-emitter saturation voltage: VCE (sat) = −0.
5 V (max) (IC = −1 A, IB = −0.
05 A)
• High collector power dissipation: PC = 1.
3 W • High-speed switching time: tstg = 1.
0 μs (typ.
) • Complementary to 2SC5029
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range
VCBO VCEO VEBO
IC IB PC Tj Tstg
−50 −50 −5 −3 −0.
2 1.
3 150 −55 to 150
V V V A A...