PBSS4230PANP
14 December 2012
30 V, 2 A
NPN/
PNP low VCEsat (BISS)
transistor
Product data sheet
1.
General description
NPN/
PNP low VCEsat Breakthrough In Small Signal (BISS)
transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
NPN/
NPN complement: PBSS4230PAN.
PNP/
PNP complement: PBSS5230PAP.
2.
Features and benefits
• • • • • •
Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain hFE at high IC Reduced Printed-Circuit Board (PCB) requirements High efficiency due to less heat generation AEC-Q101 qualified
3.
Applications
• • • • •
Load switch Battery-driven devices ...