Data Sheet
μPA2600T1R
N-CHANNEL MOSFET 20 V, 7.
0 A, 13.
8 mΩ
Description
The μPA2600T1R is N-channel MOS Field Effect
Transistors for switching application.
This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.
R07DS0998EJ0100 Rev.
1.
00 Jan 15, 2013
Features
• High Drain to Source Voltage ⎯ VDSS = 20 V (VGS = 0 V, TA = 25°C) • 2.
5V drive available • Low on-state resistance ⎯ RDS (on)1 = 13.
8 mΩ MAX.
(VGS = 4.
5 V, ID = 3.
5 A) ⎯ RDS (on)2 = 19.
1 mΩ MAX.
(VGS = 2.
5 V, ID = 3.
5 A) • Built-in gate protection diode • Lead-free and Halogen-free
6pinHUSON2020
Ordering Information
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