Preliminary Data Sheet
μ PA2762UGR
MOS FIELD EFFECT
TRANSISTOR
Description
R07DS0011EJ0100 Rev.
1.
00 Jun 01, 2010
The μ PA2762UGR is N-Channel MOS Field Effect
Transistor designed for power management applications of a notebook computer.
Features
• Low on-state resistance ⎯ RDS(on)1 = 13.
5 mΩ MAX.
(VGS = 10 V, ID = 12 A) ⎯ RDS(on)2 = 22 mΩ MAX.
(VGS = 4.
5 V, ID = 10 A) • Low Ciss: Ciss = 710 pF TYP.
(VDS = 15 V, VGS = 0 V) • Small and surface mount package (Power SOP8) • RoHS Compliant
Ordering Information
Part No.
μ PA2762UGR-E1-AT ∗1 μ PA2762UGR-E2-AT ∗1
LEAD PLATING Pure Sn (Tin)
PACKING Tape 2500 p/reel
Package Power SOP8 0.
08 g TYP.
Note: ∗1.
Pb-free (This product does not cont...