Data Sheet
μPA2765T1A
N-channel MOSFET 30 V , 100 A , 1.
3 mΩ
Description
The μ PA2765T1A is N-channel MOS Field Effect
Transistor designed for high current switching application.
R07DS0882EJ0102 Rev.
1.
02 Nov 28, 2012
Features
• VDSS = 30 V (TA = 25°C) • Low on-state resistance ⎯ RDS(on) = 1.
3 mΩ MAX.
(VGS = 10 V, ID = 46 A) ⎯ RDS(on) = 2.
9 mΩ MAX.
(VGS = 4.
5 V, ID = 32 A) • 4.
5 V Gate-drive available • Thin type surface mount package with heat spreader • Halogen free
8-pin HVSON(6051)
Ordering Information
Part No.
LEAD PLATING Pure Sn PACKING Tape 3000 p/reel Package 8-pin HVSON(6051) 0.
1 g TYP.
μ PA2765T1A-E2-AY∗1
Note: ∗1.
Pb-free (This product does not contain Pb in external electrod...