MOS FIELD EFFECT TRANSISTOR
Preliminary Data Sheet μ PA2811T1L MOS FIELD EFFECT TRANSISTOR Description R07DS0191EJ0100 Rev.1.00 Jan 11, 2011 The μ PA2811T1L is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features • VDSS −30 V (TA = 25°C) • Low on-state resistance ⎯ RDS(on) = 15 mΩ MAX. (VGS = −10 V, ID ...
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