Data Sheet
μPA2812T1L
P-channel MOSFEF –30 V, –30 A, 4.
8 mΩ
Description
The μPA2812T1L is P-channel MOS Field Effect
Transistor designed for DC/DC converter and power management applications of portable equipment.
R07DS0762EJ0101 Rev.
1.
01 May 28, 2013
Features
• VDSS = −30 V (TA = 25°C) • Low on-state resistance ⎯ RDS(on) = 4.
8 mΩ MAX.
(VGS = −10 V, ID = −30 A) • 4.
5 V Gate-drive available • Small & thin type surface mount package with heat spreader • Pb-free and Halogen free
8-pin HVSON(3333)
Ordering Information
Part No.
Lead Plating Pure Sn Packing Tape 3000 p/reel
μPA2812T1L-E2-AT
Note:
∗
*1
Package 8-pin HVSON (3333) typ.
0.
028 g
1.
Pb-free (This product does not contain Pb in e...