Data Sheet
μPA2814T1S
P-channel MOSFET –30 V, –24 A, 7.
8 mΩ
Description
The μPA2814T1S is P-channel MOS Field Effect
Transistor designed for DC/DC converter and power management applications of portable equipment.
R07DS0776EJ0101 Rev.
1.
01 May 28, 2013
Features
• VDSS = −30 V (TA = 25°C) • Low on-state resistance ⎯ RDS(on) = 7.
8 mΩ MAX.
(VGS = −10 V, ID = −24 A) • 4.
5 V Gate-drive available • Small & thin type surface mount package with heat spreader • Pb-free and Halogen free
HWSON-8
Ordering Information
Part No.
Lead Plating Pure Sn Packing Tape 5000 p/reel HWSON-8 typ.
0.
022 g Package
μPA2814T1S-E2-AT
Note:
∗
∗1
1.
Pb-free (This product does not contain Pb in external electrode and ...