Power
Transistor
Product Features
• High Output Power P1dB = 40dBm(typ)@2.
3GHz • High Efficiency • High Power Gain G1dB = 10dB(typ) @2.
3GHz • High Linearity • Hermetically sealed package • Competitive Price
RT550PD
Application
• Repeater • RF Sub-Systems • Base Station • Converter • MMDS
Package Type : WP-22
Description
The RT550PD is designed for base stations and cell extenders as 300MHz ~ 3GHz.
Absolute Maximum Ratings
Parameter
Drain - Source Voltage Gate - Source Voltage Total Power Dissipation Storage Temperature Channel Temperature
Symbol
Vds Vgs Pt Tstg Tch
Rating
+12 -5V~0V 37 -65 ~ +200 175
Unit
V V W ℃ ℃
Electrical Characteristics (Ta=+25℃)
Parameter
Saturated Drain Curren...