Pb Free Plating Product ISSUED DATE :2005/06/27 REVISED DATE : GI09N20 Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 200V 380m 8.
6A The GI09N20 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The through-hole version (TO-251) is available for low-profile applications.
Features *Simple Drive Requirement *Lower On-resistance *Fast Switching Characteristic Package Dimensions TO-251 REF.
A B C D E F Millimeter Min.
Max.
6.
40 6.
80 5.
20 5.
50 6.
80 7.
20 7.
20 7.
80 2.
30 REF.
0.
60 0.
90 REF.
G H J K L M Millimeter Min.
Max.
0.
50 0.
70 2.
20 2.
40 0.
45 0.
55 0.
45 0.
60 0.
90 1.
50 5.
40 5.
80 ...

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